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vnd10n06/vnd10n06-1 vnp10n06fi/k10n06fm "omnifet": fully autoprotected power mosfet october 1997 block diagram (*) type v clamp r ds(on) i lim vnd10n06 vnd10n06-1 vnp10n06fi vnk10n06fm 60 v 60 v 60 v 60 v 0.3 w 0.3 w 0.3 w 0.3 w 10 a 10 a 10 a 10 a n linear current limitation n thermal shut down n short circuit protection n integrated clamp n low current drawn from input pin n logic level input threshold n esd protection n schmitt trigger on input n high noise immunity description the vnd10n06, vnd10n06-1, vnp10n06fi and vnk10n06fm are monolithic devices made using sgs-thomson vertical intelligent power m0 technology, intended for replacement of standard power mosfets in dc to 50 khz applications. built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. sot82-fm 1 3 1 2 3 isowatt220 dpak to-252 3 2 1 ipak to-251 ( * ) sot82-fm pin configuration: input = 3; source = 1; drain = 2. 1/14
absolute maximum rating symbol parameter value unit dpak ipak isowatt220 sot82-fm v ds drain-source voltage (v in = 0) internally clamped v v in input voltage internally clamped v i in input current 20 ma i d drain current internally limited a i r reverse dc output current -15 a v esd electrostatic discharge (c= 100 pf, r=1.5 k w ) 4000 v p tot total dissipation at t c = 25 o c35279w t j operating junction temperature internally limited o c t c case operating temperature internally limited o c t stg storage temperature -55 to 150 o c thermal data dpak/ipak isowatt220 sot82-fm r thj-case thermal resistance junction-case max 3.5 4.5 14 o c/w r thj-amb thermal resistance junction-ambient max 100 62.5 100 o c/w electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v clamp drain-source clamp voltage i d = 200 ma v in = 0 506070 v v il input low level voltage i d = 100 m a v ds = 16 v 1.5 v v ih input high level voltage r l = 27 w v dd = 16 v v ds = 0.5 v 3.2 v v incl input-source reverse clamp voltage i in = -1 ma i in = 1 ma -1 8 -0.3 11 v v i dss zero input voltage drain current (v in = 0) v ds = 50 v v in = v il v ds < 35 v v in = v il 250 100 m a m a i iss supply current from input pin v ds = 0 v v in = 5 v 150 300 m a on ( * ) symbol parameter test conditions min. typ. max. unit r ds(on) static drain-source on resistance v in = 7 v i d = 1 a t j < 125 o c 0.15 0.3 w vnd10n06/vnd10n06-1/vnp10n06fi/vnk10n06fm 2/14
electrical characteristics (continued) dynamic symbol parameter test conditions min. typ. max. unit c oss output capacitance v ds = 13 v f = 1 mhz v in = 0 350 500 pf switching (**) symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 16 v i d = 1 a v gen = 7 v r gen = 10 w (see figure 3) 1100 550 200 100 1600 900 400 200 ns ns ns ns t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 16 v i d = 1 a v gen = 7 v r gen = 1000 w (see figure 3) 1.2 1 1.6 1.2 1.8 1.5 2.3 1.8 m s m s m s m s (di/dt) on turn-on current slope v dd = 16 v i d = 1 a v in = 7 v r gen = 10 w 1.5 a/ m s q i total input charge v dd = 12 v i d = 1 a v in = 7 v 13 nc source drain diode symbol parameter test conditions min. typ. max. unit v sd ( * ) forward on voltage i sd = 1 a v in = v il 0.8 1.6 v t rr ( ** ) q rr ( ** ) i rrm ( ** ) reverse recovery time reverse recovery charge reverse recovery current i sd = 1 a di/dt = 100 a/ m s v dd = 30 v t j = 25 o c (see test circuit, figure 5) 125 0.22 3.5 ns m c a protection symbol parameter test conditions min. typ. max. unit i lim drain current limit v in = 7 v v ds = 13 v 6 10 15 a t dlim ( ** ) step response current limit v in = 7 v v ds step from 0 to 13 v 12 20 m s t jsh ( ** ) overtemperature shutdown 150 o c t jrs ( ** ) overtemperature reset 135 o c e as ( ** ) single pulse avalanche energy starting t j = 25 o c v dd = 24 v v in = 7 v r gen = 1 k w l = 10 mh 250 mj ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ** ) parameters guaranteed by design/characterization vnd10n06/vnd10n06-1/vnp10n06fi/vnk10n06fm 3/14
protection features during normal operation, the input pin is electrically connected to the gate of the internal power mosfet through a low impedance path as soon as v in > v ih . the device then behaves like a standard power mosfet and can be used as a switch from dc to 50khz. the only difference from the users standpoint is that a small dc current (typically 150 m a) flows into the input pin in order to supply the internal circuitry. during turn-off of an unclamped inductive load the output voltage is clamped to a safe level by an integrated zener clamp between drain pin and the gate of the internal power mosfet. in this condition, the power mosfet gate is set to a voltage high enough to sustain the inductive load current even if the input pin is driven to 0v. the device integrates an active current limiter circuit which limits the drain current i d to i lim whatever the input pin voltage. when the current limiter is active, the device operates in the linear region, so power dissipation may exceed the heatsinking capability. both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold t jsh . if t j reaches t jsh , the device shuts down whatever the input pin voltage. the device will restart automatically when t j has cooled down to t jrs vnd10n06/vnd10n06-1/vnp10n06fi/vnk10n06fm 4/14
thermal impedance for dpak / ipak thermal impedance for sot82-fm output characteristics thermal impedance for isowatt220 derating curve static drain-source on resistance vs input voltage vnd10n06/vnd10n06-1/vnp10n06fi/vnk10n06fm 5/14
static drain-source on resistance input charge vs input voltage normalized input threshold voltage vs temperature static drain-source on resistance capacitance variations normalized on resistance vs temperature vnd10n06/vnd10n06-1/vnp10n06fi/vnk10n06fm 6/14
normalized on resistance vs temperature turn-on current slope turn-off drain-source voltage slope turn-on current s lope turn-off drain-source voltage slope switching time resistive load vnd10n06/vnd10n06-1/vnp10n06fi/vnk10n06fm 7/14
switching time resistive load current limit vs junction temperature source drain diode voltage vs junction temperature switching time resistive load step response current limit vnd10n06/vnd10n06-1/vnp10n06fi/vnk10n06fm 8/14
fig. 2: unclamped inductive waveforms fig. 3: switching times test circuits for resistive load fig. 4: input charge test circuit fig. 1: unclamped inductive load test circuits fig. 5: test circuit for inductive load switching and diode recovery times fig. 6: waveforms vnd10n06/vnd10n06-1/vnp10n06fi/vnk10n06fm 9/14
dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.9 0.025 0.035 b2 5.2 5.4 0.204 0.212 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 9.35 10.1 0.368 0.397 l2 0.8 0.031 l4 0.6 1 0.023 0.039 == d l2 l4 1 3 == b e == b2 g 2 a c2 c h a1 detail "a" a2 detail "a" to-252 (dpak) mechanical data 0068772-b vnd10n06/vnd10n06-1/vnp10n06fi/vnk10n06fm 10/14
dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 a c2 c a3 h a1 d l l2 l1 1 3 = = b3 b b6 b2 e g = = = = b5 2 to-251 (ipak) mechanical data 0068771-e vnd10n06/vnd10n06-1/vnp10n06fi/vnk10n06fm 11/14
dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.4 0.7 0.015 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 isowatt220 mechanical data p011g vnd10n06/vnd10n06-1/vnp10n06fi/vnk10n06fm 12/14
dim. mm inch min. typ. max. min. typ. max. a 2.85 3.05 1.122 1.200 a1 1.47 1.67 0.578 0.657 b 0.40 0.60 0.157 0.236 b1 1.4 1.6 0.551 0.630 b2 1.3 1.5 0.511 0.590 c 0.45 0.6 0.177 0.236 d 10.5 10.9 4.133 4.291 e 2.2 2.8 0.866 1.102 e 7.45 7.75 2.933 3.051 l 15.5 15.9 6.102 6.260 l1 1.95 2.35 0.767 0.925 p032r sot82-fm mechanical data vnd10n06/vnd10n06-1/vnp10n06fi/vnk10n06fm 13/14
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications ment ioned in this publication are subject to change without noti ce. this publication supersedes and replaces all info rmation previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in l ife support dev ices or systems without express written approval of s gs-thomson microelectonics. ? 1997 sgs-thomson microelectronics - printed in it aly - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - hong kong - i taly - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a . . . vnd10n06/vnd10n06-1/vnp10n06fi/vnk10n06fm 14/14

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